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| Bulletin PD-20742 rev. B 07/01 80EBU04 Ultrafast Soft Recovery Diode Features * Ultrafast Recovery * 175C Operating Junction Temperature Benefits * Reduced RFI and EMI * Higher Frequency Operation * Reduced Snubbing * Reduced Parts Count trr = 50ns (typ) IF(AV) = 80Amp VR = 400V Description/ Applications These diodes are optimized to reduce losses and EMI/ RFI in high frequency power conditioning systems. The softness of the recovery eliminates the need for a snubber in most applications. These devices are ideally suited for HF welding, power converters and other applications where switching losses are not significant portion of the total losses. Absolute Maximum Ratings Parameters VR IF(AV) IFSM IFRM ! TJ, TSTG Cathode to Anode Voltage Continuous Forward Current, TC = 101C Single Pulse Forward Current, TC = 25C Maximum Repetitive Forward Current Operating Junction and Storage Temperatures Max 400 80 800 160 - 55 to 175 Units V A C !"Square Wave, 20kHz Case Styles PowIRtab www.irf.com 1 80EBU04 Bulletin PD-20742 rev. B 07/01 Electrical Characteristics @ TJ = 25C (unless otherwise specified) Parameters VBR, Vr VF Breakdown Voltage, Blocking Voltage Forward Voltage Min Typ Max Units Test Conditions 400 1.1 1.3 V V V V A mA pF nH IR = 100A IF = 80A IF = 80A, TJ = 175C IF = 80A, TJ = 125C VR = VR Rated TJ = 150C, VR = VR Rated VR = 200V Measured lead to lead 5mm from package body 0.92 1.08 0.98 1.15 50 3.5 50 2 - IR Reverse Leakage Current - CT LS Junction Capacitance Series Inductance - Dynamic Recovery Characteristics @ TJ = 25C (unless otherwise specified) Parameters trr Reverse Recovery Time Min Typ Max Units Test Conditions 50 87 151 9.3 17.2 405 1300 60 nC A ns IF = 1A, diF/dt = 200A/s, VR = 30V TJ = 25C TJ = 125C TJ = 25C TJ = 125C TJ = 25C TJ = 125C IF = 80A VR = 200V diF /dt = 200A/s IRRM Peak Recovery Current - Qrr Reverse Recovery Charge - Thermal - Mechanical Characteristics Parameters RthJC RthCS # Wt Thermal Resistance, Junction to Case Thermal Resistance, Case to Heatsink Weight 0.18 T Mounting Torque 1.2 10 #"Mounting Surface, Flat, Smooth and Greased Min Typ 0.2 Max 0.70 Units K/W 5.02 g (oz) 2.4 20 N*m lbf.in 2 www.irf.com 80EBU04 Bulletin PD-20742 rev. B 07/01 1000 Reverse Current - I R (A) 1000 T J = 175C 100 125C 10 1 0.1 0.01 0.001 0 100 200 300 400 Reverse Voltage - VR (V) Fig. 2 - Typical Values Of Reverse Current Vs. Reverse Voltage 25C Instantaneous Forward Current - I F (A) 100 T = 175C J J J T = 125C T = 25C 1000 10 Junction Capacitance - C T (pF) T J = 25C 100 1 0 0.5 1 1.5 2 2.5 Forward Voltage Drop - VFM (V) Fig. 1 - Typical Forward Voltage Drop Characteristics 10 1 10 100 1000 Reverse Voltage - VR (V) Fig. 3 - Typical Junction Capacitance Vs. Reverse Voltage 1 Thermal Impedance Z thJC (C/W) D = 0.50 D = 0.20 D = 0.10 D = 0.05 D = 0.02 D = 0.01 Single Pulse (Thermal Resistance) PDM 0.1 t1 t2 Notes: 1. Duty factor D = t1/ t2 2. Peak Tj = Pdm x ZthJC + Tc 0.01 0.00001 0.0001 0.001 0.01 0.1 t1, Rectangular Pulse Duration (Seconds) 1 10 Fig. 4 - Max. Thermal Impedance Z thJC Characteristics www.irf.com 3 80EBU04 Bulletin PD-20742 rev. B 07/01 180 Allowable Case Temperature (C) Average Power Loss ( Watts ) 140 RMS Limit 160 140 DC 120 100 80 60 40 20 0 0 20 40 60 80 D = 0.01 D = 0.02 D = 0.05 D = 0.10 D = 0.20 D = 0.50 DC 120 100 Square wave (D = 0.50) 80% Rated Vr applied 80 see note (3) 60 0 20 40 60 80 100 120 Average Forward Current - IF(AV) (A) Fig. 5 - Max. Allowable Case Temperature Vs. Average Forward Current 100 120 Average Forward Current - IF(AV) (A) Fig. 6 - Forward Power Loss Characteristics 250 Vr = 200V Tj = 125C Tj = 25C 4500 4000 3500 IF = 160A IF = 80A IF = 40A Vr = 200V Tj = 125C Tj = 25C 200 3000 Qrr ( nC ) trr ( ns ) 2500 2000 1500 IF = 160A IF = 80A IF = 40A 150 100 1000 500 50 100 di F /dt (A/s ) 1000 0 100 di F /dt (A/s ) 1000 Fig. 7 - Typical Reverse Recovery time vs. di F /dt Fig. 8 - Typical Stored Charge vs. di F /dt (3) Formula used: TC = TJ - (Pd + PdREV) x RthJC ; Pd = Forward Power Loss = IF(AV) x VFM @ (IF(AV) / D) (see Fig. 6); PdREV = Inverse Power Loss = VR1 x IR (1 - D); IR @ VR1 = 80% rated VR 4 www.irf.com 80EBU04 Bulletin PD-20742 rev. B 07/01 Reverse Recovery Circuit VR = 200V 0.01 L = 70H D.U.T. di F /dt dif/dt ADJUST D G IRFP250 S Fig. 9- Reverse Recovery Parameter Test Circuit 3 IF 0 trr ta tb 4 2 Q rr I RRM 0.5 I RRM di(rec)M/dt 0.75 I RRM 5 1 di fF/dt /dt 1. diF/dt - Rate of change of current through zero crossing 2. IRRM - Peak reverse recovery current 3. trr - Reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current 4. Qrr - Area under curve defined by t rr and IRRM t rr x I RRM Q rr = 2 5. di (rec) M / dt - Peak rate of change of current during t b portion of t rr Fig. 10 - Reverse Recovery Waveform and Definitions www.irf.com 5 80EBU04 Bulletin PD-20742 rev. B 07/01 Outline Table Dimensions in millimeters and (inches) Ordering Information Table Device Code 80 1 E 2 B 3 U 4 04 5 1 2 3 4 5 - Current Rating Single Diode PowIRtab Ultrafast Recovery Voltage Rating (80 = 80A) (Ultrafast/Hyperfast only) (04 = 400V) 6 www.irf.com 80EBU04 Bulletin PD-20742 rev. B 07/01 Data and specifications subject to change without notice. This product has been designed and qualified for Industrial Level. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7309 Visit us at www.irf.com for sales contact information. 07/01 www.irf.com 7 |
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